Applications of EBSD for analysis of deformed high temperature materials

Electron backscatter diffraction (EBSD) has many uses for material analysis and is often complementary to other characterization techniques. This webinar will focus on three case studies of its application to high-temperature materials conducted at the Center for Electron Microscopy and Analysis (CEMAS) at The Ohio State University. Firstly, EBSD is shown as an input parameter to SEM-based controlled electron channeling contrast imaging (cECCI), wherein data is used to quantify defect structure in a creep-deformed Ni-based superalloy under defined diffraction conditions. In a parallel case, EBSD is used to select specimens for additional analysis of planar defects in the specimen via scanning transmission electron microscopy (STEM) utilizing diffraction contrast imaging (DCI) and atomic resolution energy dispersive x-ray spectroscopy (EDS), the latter requiring minimal tilt of extremely thin focused-ion beam (FIB) extracted lamellae to specified zone axes, such that planar defects are viewed edge-on. Lastly, EBSD is leveraged to evaluate the effect of build direction on creep resistance of additively manufactured (AM) Ti-6Al-4V; the evolution of texture and grain size via dynamic recrystallization were determined, and related to energy dissipation characteristics of the dynamic negative stepped (DNST) creep tests.